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| HiPerFETTM Power MOSFET Single MOSFET Die Preliminary data sheet IXFN 180N10 VDSS ID25 RDS(on) = 100 V = 180 A = 8 m trr 250 ns Symbol Test Conditions VDSS VDGR VGS VGSM ID25 IL(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL VISOL Md Weight 1.6 mm (0.063 in) from case for 10 s 50/60 Hz, RMS IISOL 1 mA t = 1 min t=1s TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C Terminal (current limit) T C = 25C; Note 1 TC = 25C TC = 25C TC = 25C IS IDM, di/dt 100 A/s, VDD VDSS TJ 150C, RG = 2 TC = 25C Maximum Ratings 100 100 20 30 180 100 720 180 60 3 5 600 -55 ... +150 150 -55 ... +150 300 2500 3000 V V V V A A A A mJ J V/ns W C C C C V~ V~ miniBLOC, SOT-227 B (IXFN) E153432 S G S D G = Gate S = Source D = Drain Either Source terminal at miniBLOC can be used as Main or Kelvin Source Features * International standard package * Encapsulating epoxy meets UL 94 V-0, flammability classification * miniBLOC with Aluminium nitride isolation * Low RDS (on) HDMOSTM process * Rugged polysilicon gate cell structure * Unclamped Inductive Switching (UIS) Mounting torque Terminal connection torque 1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in. 30 g rated * Low package inductance * Fast intrinsic Rectifier Applications * * * * Symbol Test Conditions (TJ = 25C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS= 0 V, ID = 3mA VDS = VGS, ID = 8mA VGS= 20V, VGS = 0V VDS= VDSS VGS= 0 V VGS = 10V, ID = 0.5 * ID25 Note 2 Characteristic Values Min. Typ. Max. 100 2 4 100 TJ = 25C TJ = 125C 100 2 8 V V nA A mA m DC-DC converters Synchronous rectification Battery chargers Switched-mode and resonant-mode power supplies * DC choppers * Temperature and lighting controls * Low voltage relays Advantages * Easy to mount * Space savings * High power density (c) 1999 IXYS All rights reserved 98546B (8/99) IXFN 180N10 Symbol Test Conditions (TJ = 25C, unless otherwise specified) gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK LOC, SOT-227 B miniBLOC, SOT-227 B 0.05 VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 RG = 1 (External), VGS = 0 V, VDS = 25 V, f = 1 MHz VDS = 10 V; ID = 60A, Note 2 Characteristic Values Min. Typ. Max. 60 90 9100 3200 1600 50 90 140 65 360 65 190 0.21 S pF pF pF ns ns ns ns nC nC nC K/W K/W M4 screws (4x) supplied Dim. A B C D E F G H J K L M N O P Q Millimeter Min. Max. 31.50 7.80 4.09 4.09 4.09 14.91 30.12 38.00 11.68 8.92 0.76 12.60 25.15 1.98 4.95 26.54 3.94 4.72 24.59 -0.05 31.88 8.20 4.29 4.29 4.29 15.11 30.30 38.23 12.22 9.60 0.84 12.85 25.42 2.13 5.97 26.90 4.42 4.85 25.07 0.1 Inches Min. Max. 1.240 0.307 0.161 0.161 0.161 0.587 1.186 1.496 0.460 0.351 0.030 0.496 0.990 0.078 0.195 1.045 0.155 0.186 0.968 -0.002 1.255 0.323 0.169 0.169 0.169 0.595 1.193 1.505 0.481 0.378 0.033 0.506 1.001 0.084 0.235 1.059 0.174 0.191 0.987 0.004 miniBLOC, SOT-227 B Source-Drain Diode (TJ = 25C, unless otherwise specified) Symbol Test Conditions IS ISM VSD t rr QRM IRM Notes: 1. 2. VGS = 0 Repetitive; pulse width limited by TJM IF = 100 A, VGS = 0 V, Pulse test, t 300 s, duty cycle d 2 % I F = 50 A, -di/dt = 100 A/s, V R = 50 V R S Characteristic Values Min. Typ. Max. 180 720 1.5 250 1.1 13 A A V ns C A T U Pulse width limited by TJM. Pulse test, t 300 ms, duty cycle d 2 % IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 IXFN 180N10 Figure 1. Output Characteristics at 25OC 200 TJ=25OC VGS=10V 9V 8V 7V Figure 2. Output Characteristics at 125OC 200 TJ=125OC VGS=10V 9V 8V 7V 6V 150 150 6V ID - Amperes ID - Amperes 100 5V 100 5V 50 50 0 0 0.5 1.0 1.5 2.0 0 1 2 3 4 5 0.0 VDS - Volts VDS - Volts Figure 3. RDS(on) normalized to 15A/25OC vs. ID 1.8 VGS = 10V TJ = 125 C O Figure 4. RDS(on) normalized to 15A/25OC vs. TJ 2.0 1.8 1.6 1.4 1.2 ID=90A ID=180A VGS=10V VGS=15V RDS(ON) - Normalized 1.4 1.2 TJ = 25OC 1.0 0.8 0 50 100 150 200 RDS(ON) - Normalized 1.6 1.0 0.8 25 VGS=10V VGS=15V 50 75 100 125 150 ID - Amperes TJ - Degrees C Figure 5. Drain Current vs. Case Temperature 125 100 Figure 6. Admittance Curves 100 80 ID - Amperes Terminal Current Limit 75 50 25 0 ID - Amperes 60 40 20 0 2 4 6 8 TJ = 125oC TJ = 25oC -50 -25 0 25 50 75 100 125 150 TC - Degrees C VGS - Volts (c) 1999 IXYS All rights reserved IXFN 180N10 Figure 7. Gate Charge 15 10000 12 VDS=50V ID=90A IG=10mA Figure 8. Capacitance Curves Ciss 9 6 3 0 0 50 100 150 200 250 300 350 400 Capacitance - pF F = 100kHz Coss VGS - Volts Crss 1000 0 5 10 15 20 25 30 35 40 Gate Charge - nC VDS - Volts Figure 9. Forward Voltage Drop of the Intrinsic Diode 200 175 VGS= 0V Figure 10. Forward Bias Safe Operating Area 200 100 1 ms 150 ID - Amperes ID - Amperes 125 100 TJ=125OC 10 ms 10 TC = 25 C O 75 50 25 0 TJ=25OC DC 1 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1 10 100 VSD - Volts VDS - Volts Figure 11. Transient Thermal Resistance 0.40 0.20 R(th)JC - K/W 0.10 0.08 0.06 0.04 0.02 0.01 10-3 10-2 10-1 100 101 Pulse Width - Seconds IXYS reserves the right to change limits, test conditions, and dimensions. |
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